Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers-Reference-Cited by-同舟云学术

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Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers

Published:1996-01 Issue:1-3 Volume:36 Page:230-236
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kirscht F.G.,Furukawa Y.,Seifert W.,Schmalz K.,Buczkowski A.,Kim S.B.,Abe H.,Koya H.,Bailey J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Noncontact minority‐carrier lifetime measurement for magnetic field applied Czochralski silicon crystals

2. Impact of Defects on the Technology of Highly Integrated Circuits

3. Effect of bulk microdefects induced in heat‐treated Czochralski silicon on dielectric breakdown of thermal SiO2films

4. Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of defect mitigation strategies for UMG-Si wafers;Frontiers in Photonics;2024-01-10

2. Impact of Gettering and Hydrogenation on Sub-Band-Gap Luminescence from Ring Defects in Czochralski-Grown Silicon;ACS Applied Energy Materials;2021-10-01

3. Effect of oxygen precipitation through annealing process on lifetime degradation by Czochralski-Si crystal growth conditions;Japanese Journal of Applied Physics;2019-02-05

4. Evaluation of oxygen precipitation behavior in n-type Czochralski-Si for photovoltaic by infrared tomography: Effects of carbon concentration and annealing process conditions;Japanese Journal of Applied Physics;2018-06-05

5. Mechanical grooving effect on the gettering efficiency of crystalline silicon based solar cells;Journal of Crystal Growth;2017-04

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