Impact of Defects on the Technology of Highly Integrated Circuits
Author:
Affiliation:
1. Johann Wolfgang Goethe-University
2. International University Bremen
3. Technische Universität Darmstadt
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.38-41.1.pdf
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Defects Due to Metal Silicide Precipitation in Microelectronic Device Manufacturing: The Unlovely Face of Transition Metal Silicides;physica status solidi (b);2000-11
4. Iron contamination in silicon technology;Applied Physics A: Materials Science & Processing;2000-05-01
5. Gettering in Silicon;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
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