N2O-grown oxides/4H-SiC (0001), (033¯8), and (112¯0) interface properties characterized by using p-type gate-controlled diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3028016
Reference24 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Status and prospects for SiC power MOSFETs
3. 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
4. A Self-Aligned Process for High-Voltage, Short-Channel Vertical DMOSFETs in 4H-SiC
5. 4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance
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2. Improvement of Interface Properties for Thermally Oxidized SiC/SiO<sub>2</sub> MOS Capacitor by Post Oxidation Annealing Treatment;Materials Science Forum;2023-05-31
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5. Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes;Applied Physics Letters;2016-04-11
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