Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si-Terminated (C–Si–O) Diamond Capacitors-Reference-Cited by-同舟云学术

Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si-Terminated (C–Si–O) Diamond Capacitors

Published:2022-07 Issue:7 Volume:69 Page:3604-3610
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fu Yu¹^ORCID,Kono Shozo²,Kawarada Hiroshi¹^ORCID,Hiraiwa Atsushi²

Affiliation:

1. Faculty of Science and Engineering, Waseda University, Tokyo, Japan

2. Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo, Japan

Funder

“Academic Exchange Special Fund” of the University of Electronic Science and Technology of China;

“Project of Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development” of the Ministry of Education, Culture, Sports, Science and Technology, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09783465.pdf?arnumber=9783465

Reference45 articles.

1. Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors

2. N2O-grown oxides/4H-SiC (0001), (033¯8), and (112¯0) interface properties characterized by using p-type gate-controlled diodes

3. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

4. Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

5. Gate/insulator-interfacial-dipole-controlled current conduction in Al2O3 metal-insulator-semiconductor capacitors;okubo;J Appl Phys,2019

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