Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy-Reference-Cited by-同舟云学术

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Published:2014-09-08 Issue:10 Volume:105 Page:102103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Duc Tran Thien¹,Pozina Galia¹,Son Nguyen Tien¹,Janzén Erik¹,Ohshima Takeshi²,Hemmingsson Carl¹

Affiliation:

1. Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden

2. Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292, Japan

Funder

Vetenskapsrådet (Swedish Research Council)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4895390

Reference23 articles.

1. M. E. Levinshtein , S. L. Rumyantsev , and M. S. Shur ,Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, and SiGe( John Wiley and Sons, New York, 2001), p. 2.

2. Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor

3. Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN

4. Deep levels and irradiation effects in n-GaN

5. Electron-irradiation-induced deep level in n-type GaN

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