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2. Characterization of different trap states in AlGaN/GaN MIS-HEMTs under high reverse gate stress;Zhang;Micro Nanostruct.,2023
3. The effects and mechanisms of 2 MeV proton irradiation on inp-based high electron mobility transistors;Zhang;Appl. Phys. Lett.,2022
4. Investigation of trapping effects in schottky lightly doped P-GaN gate stack under γ-ray irradiation;Peng;Appl. Phys. Lett.,2022
5. Mechanism of reverse gate drain current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation;Sun;Appl. Phys. Lett.,2022