CF2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370296
Reference47 articles.
1. In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges
2. Plasma-assisted etching
3. Silicon etching mechanisms in a CF4/H2glow discharge
4. Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma
5. Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma
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