In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference9 articles.
1. Control of relative etch rates of SiO2 and Si in plasma etching
2. L. M. Ephrath, J. Electrochem. Soc. (to be published).
3. Fabrication of deep square wave structures with micron dimensions by reactive sputter etching
4. Profile control by reactive sputter etching
5. Ion‐surface interactions in plasma etching
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