Direct and inverse equivalent InAlAs–InP interfaces grown by gas-source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120969
Reference19 articles.
1. Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy
2. Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications
3. Optical transitions and chemistry at the In0.52Al0.48As/InP interface
4. Low temperature InAlAs buffer layers using trimethylarsenic and arsine by metalorganic chemical vapor deposition
5. Optical analysis of hot carrier distribution and transport properties in InP/AlInAs type II heterostructures
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1. The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation;AIP Advances;2024-01-01
2. High resolution X-ray diffraction study in InAs/GaSb superlattice;Ferroelectrics;2022-08-18
3. Effect of V/III ratio on the optical properties of (3 1 1)A and (3 1 1) B oriented InAlAs/InP heterostructures;Results in Physics;2019-03
4. Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well;Crystallography Reports;2014-11
5. Unusual nanostructures of “lattice matched” InP on AlInAs;Applied Physics Letters;2014-04-07
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