Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well-Reference-Cited by-同舟云学术

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Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well

Published:2014-11 Issue:6 Volume:59 Page:900-907
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Galiev G. B.,Vasiliev A. L.,Imamov R. M.,Klimov E. A.,Maltsev P. P.,Pushkarev S. S.,Presniakov M. Yu.,Trunkin I. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1063774514060108.pdf

Reference22 articles.

1. K. Dae-Hyun and A. del Alamo Jesus, IEEE Electron. Dev. Lett. 31, 806 (2010).

2. F. Peizo, J. C. Ferrer, A. Cornet, et al., J. Vac. Sci. Tachnol. B 15(5), 1715 (1997).

3. R. Dong-Wan, H. G. Lee, and D. W. Lee, J. Cryst. Growth 167, 468 (1996).

4. M. Sexl, G. Bohm, D. Xu, et al., J. Cryst. Growt. 175–176, 915 (1997).

5. K. Onda, A. Fujihara, A. Vakejima, et al., IEEE Electron Device Lett. 19, 300 (1998).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation of drain current as a function of energies substrate for InP HEMT devices;Journal of Semiconductors;2018-11

2. Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures;Crystallography Reports;2017-03

3. High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2016-05

4. Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well;Semiconductors;2015-09

5. Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”;Crystallography Reports;2015-05

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