Optical transitions and chemistry at the In0.52Al0.48As/InP interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107118
Reference11 articles.
1. InxAl1-xAs/InP heterojunction insulated gate field effect transistors (HIGFET's)
2. Heterojunction InAlAs/InP MESFETs grown by OMVPE
3. High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy
4. Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification
5. Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy
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3. Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well;Semiconductors;2015-09
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