Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD
Author:
Publisher
Wiley
Subject
Spectroscopy,General Materials Science
Reference31 articles.
1. Optical properties of InP/InAlAs/InP grown by MOCVD on (100) substrates: influence of V/III molar ratio
2. Wannier-Stark localization in a 1.55 mu m InGaAs/InAlAs superlattice waveguide modulator structure
3. Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel
4. InAlGaAs∕InP light-emitting transistors operating near 1.55μm
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4. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes;Journal of Materials Science: Materials in Electronics;2020-05-29
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