Ultrathin AlN∕GaN heterostructure field-effect transistors with deposition of Si atoms on AlN barrier surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3036007
Reference13 articles.
1. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance
2. AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN
3. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
4. Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors
5. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
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1. Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition;Applied Physics Letters;2015-07-27
2. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates;Applied Physics Letters;2014-09
3. Dependence of magnetic properties on the Fe2+ ion in Ba-doped BiFeO3 multiferroic films;Thin Solid Films;2012-03
4. High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator;IEEE Electron Device Letters;2011-12
5. SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs;International Journal of High Speed Electronics and Systems;2011-09
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