Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
Author:
Affiliation:
1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927743
Reference27 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
3. Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz
4. High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates
5. Strain relaxation in (0001) AlN/GaN heterostructures
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