SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs-Reference-Cited by-同舟云学术

SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs

Published:2011-09 Issue:03 Volume:20 Page:385-392
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

CHABAK KELSON D.¹,WALKER DENNIS E.¹,CRESPO ANTONIO¹,TREJO MANUEL¹,KOSSLER MAURICIO¹,TETLAK STEVE¹,GILLESPIE JAMES K.¹,FITCH ROBERT C.¹,VIA GLEN D.¹,DABIRAN AMIR²,WOWCHAK A.M.²,CHOW P.P.²

Affiliation:

1. Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

2. SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344, USA

Abstract

This paper presents high performance device results using an ultra-thin AlN / GaN structure on sapphire substrate with a 100-nm T -gate. Excellent dc and RF characteristics are reported, including an extrinsic transconductance of 500 mS/mm and an extrinsic f t / f max ( U ) ratio of 78/111-GHz which is among the highest reported for AlN / GaN HFETs. Low gate leakage results are also presented despite the small barrier thickness and absence of a gate dielectric. Modeling of the small signal parameters is also discussed to gain an understanding of the limiting and contributing performance factors.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156411006660

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4. Ultrathin AlN∕GaN heterostructure field-effect transistors with deposition of Si atoms on AlN barrier surface

5. Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs