Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368439
Reference31 articles.
1. Dry etching damage of silicon: A review
2. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
3. Damage in silicon caused by magnetron ion etching and its recovery effect
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