Trap-limited migration of vacancy-type defects in 7.5 keV H−-implanted Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1456952
Reference21 articles.
1. Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer
2. Trap-Limited Migration of Si Self-Interstitials at Room Temperature
3. Point defect injection into silicon due to low‐temperature surface modifications
4. Defect generation during plasma treatment of semiconductors
5. New Class of Related Optical Defects in Silicon Implanted with the Noble Gases He, Ne, Ar, Kr, and Xe
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