Damage in silicon caused by magnetron ion etching and its recovery effect-Reference-Cited by-同舟云学术

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Damage in silicon caused by magnetron ion etching and its recovery effect

Published:1990 Issue:4 Volume:13 Page:629-632
ISSN:0148-6411
Container-title:IEEE Transactions on Components, Hybrids, and Manufacturing Technology
language:
Short-container-title:IEEE Trans. Comp., Hybrids, Manufact. Technol.

Author:

Hirai M.,Iwakuro H.,Ohno J.-I.,Kuroda T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,General Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/33/2278/00062571.pdf?arnumber=62571

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

2. Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si;Journal of Applied Physics;1998-09

3. Electronic Properties Of Defects Formed In n-Si During Sputter-Etching In An Ar Plasma;MRS Proceedings;1996

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