Effects of hydrogen on the growth of nanocrystalline silicon films by electron-beam excited plasma chemical vapor deposition-Reference-Cited by-同舟云学术

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Effects of hydrogen on the growth of nanocrystalline silicon films by electron-beam excited plasma chemical vapor deposition

Published:2000-12 Issue:11 Volume:88 Page:6848-6855
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Imaizumi Mitsuru,Yamaguchi Koji,Okitsu Kazuhiko,Yamaguchi Masafumi,Hara Tamio,Ito Tadashi,Konomi Ichiro,Jones Kim M.,Al-Jassim Mowafak M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1287754

Reference22 articles.

1. Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells

2. Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma

3. A fully automated hot‐wall multiplasma‐monochamber reactor for thin film deposition

4. Thin-Film Polycrystalline Si Solar Cell on Glass Substrate Fabricated by a Novel Low Temperature Process

5. Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) Method

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitriding of a tool steel with an electron-beam-excited plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-11

2. Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2;Thin Solid Films;2006-08

3. High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition;Journal of Applied Physics;2006-04

4. Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si:H thin films;Journal of Crystal Growth;2004-01

5. Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH4Plasmas;Japanese Journal of Applied Physics;2003-12-26

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