High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2181279
Reference36 articles.
1. Microcrystalline silicon.
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3. Oxidation of H‐terminated Si(100) surfaces studied by high‐resolution electron energy loss spectroscopy
4. Effects of hydrogen on the growth of nanocrystalline silicon films by electron-beam excited plasma chemical vapor deposition
5. Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces
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