Study on liquid-like SiGe cluster growth during co-condensation from supersaturated vapor mixtures by molecular dynamics simulation
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113-0033, Japan
Abstract
Funder
Agency for Natural Resources and Energy
New Energy and Industrial Technology Development Organization
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP05589E
Reference50 articles.
1. Nano cluster assisted high rate epitaxy of silicon by mesoplasma CVD
2. Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition
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4. Molecular dynamics simulation of Si nanoclusters in high rate and low temperature epitaxy
5. Nanocluster dynamics in fast rate epitaxy under mesoplasma condition
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1. Cluster-Assisted Mesoplasma Chemical Vapor Deposition for Fast Epitaxial Growth of SiGe/Si Heterostructures: A Molecular Dynamics Simulation Study;Materials;2024-05-19
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3. Understanding the crystallization mechanism of nonspherical nanoclusters: A dynamic density functional study;Chemical Physics Letters;2023-08
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