Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors-Reference-Cited by-同舟云学术

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Published:2012-02-06 Issue:6 Volume:100 Page:063505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

El Kazzi M.,Czornomaz L.,Rossel C.,Gerl C.,Caimi D.,Siegwart H.,Fompeyrine J.,Marchiori C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3683472

Reference20 articles.

1. Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

2. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

3. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

4. Defect gap states on III–V semiconductor–oxide interfaces (invited)

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