Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks-Reference-Cited by-同舟云学术

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Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks

Published:2016-10-24 Issue:17 Volume:109 Page:172101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yoshida S.,Lin D.,Vais A.,Alian A.,Franco J.,El Kazzi S.,Mols Y.,Miyanami Y.,Nakazawa M.,Collaert N.,Watanabe H.,Thean A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4965854

Reference24 articles.

1. Fundamentals of III-V Semiconductor MOSFETs

2. Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

3. Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs

4. GaAs interfacial self-cleaning by atomic layer deposition

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1. Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs;Micromachines;2023-08-15

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3. Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling;Journal of Applied Physics;2022-07-14

4. Analysis of III–V oxides at high-k/InGaAs interfaces induced by metal electrodes;Japanese Journal of Applied Physics;2019-04-10

5. Investigation of Cavity Enhanced XEOL of a Single ZnO Microrod by Using Multifunctional Hard X-ray Nanoprobe;Scientific Reports;2019-01-18

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