Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles-Reference-Cited by-同舟云学术

Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles

Published:2016-03-28 Issue:12 Volume:119 Page:125702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ma Jinlong¹,Li Wu²,Luo Xiaobing¹

Affiliation:

1. State Key Laboratory of Coal Combustion, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

2. Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4944809

Reference45 articles.

1. Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

2. Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

3. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

4. Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions

5. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer-scale N-polar GaN heterogeneous structure fabricated by surface active bonding and laser lift-off;Journal of Alloys and Compounds;2024-11

2. Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures;Advanced Functional Materials;2024-05-28

3. A combined AIMD and DFT study of the low-energy radiation responses of GaN;Physical Chemistry Chemical Physics;2024

4. Variations of Interatomic Force Constants in the Topological Phonon Phase Transition of AlGaN;physica status solidi (RRL) – Rapid Research Letters;2023-12-25

5. Alloying Reversed Anisotropy of Thermal Transport in Bulk Al_0.5Ga_0.5N;The Journal of Physical Chemistry Letters;2023-10-26