A combined AIMD and DFT study of the low-energy radiation responses of GaN-Reference-Cited by-同舟云学术

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Published:2024 Issue:24 Volume:26 Page:17383-17395
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Jiang Ming¹^ORCID,Cheng Nuo²,Zhu Xin-Yu²,Hu Xuan-Liang³,Wang Zi-Han³,Liu Ning³,Song Shuo³,Wang Sheng-Ze³,Liu Xu-Sheng⁴^ORCID,Singh Chandra Veer⁵⁶^ORCID

Affiliation:

1. Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China

2. School of Materials Science and Engineering, Anhui University, Hefei, 230601, China

3. Stony Brook Institute at Anhui University, Anhui University, Hefei 230601, China

4. College of Physics and Engineering Technology, Chengdu Normal University, Chengdu 611130, China

5. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, ON M5S 3E4, Canada

6. Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, ON M5S 3G8, Canada

Abstract

Although GaN is a promising candidate for semiconductor devices, degradation of GaN-based device performance may occur when the device is bombarded by high-energy charged particles.

Funder

Anhui Provincial Department of Education

Chengdu Normal University

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP00426D

Reference53 articles.

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