Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3326079
Reference19 articles.
1. Thermal stability of metal organic vapor phase epitaxy grown AlInN
2. InAlN/GaN HEMTs: a first insight into technological optimization
3. Power electronics on InAlN/(In)GaN: Prospect for a record performance
4. Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
5. Screw dislocations in GaN: The Ga-filled core model
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1. Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices;Applied Physics Letters;2024-07-15
2. Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination;physica status solidi (a);2024-01-15
3. Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2023-12
4. Enhanced quantum oscillations and scattering effect in quaternary InAlGaN/GaN two-dimensional electron gas;Applied Physics Letters;2023-05-15
5. Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT;Micromachines;2023-01-24
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