Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366136
Reference11 articles.
1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
2. Recent developments in SiC single-crystal electronics
3. Electrical properties of thermal oxide grown using dry oxidation onp‐type 6H‐silicon carbide
4. Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide
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