Demonstration of 4H-silicon carbide on an aluminum nitride integrated photonic platform

Abstract

The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide (SiC) to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with 1-µm-thick aluminum nitride and demonstrate a 4H-silicon-carbide-on-aluminum-nitride integrated photonic platform for the first time to our knowledge. Efficient grating couplers, low-loss waveguides, and compact microring resonators with intrinsic quality factors up to 210,000 are fabricated. In addition, by undercutting the aluminum nitride layer, the intrinsic quality factor of the silicon carbide microring is improved by nearly one order of magnitude (1.8 million). Finally, an optical pump–probe method is developed to measure the thermal conductivity of the aluminum nitride layer, which is estimated to be over 30 times of that of silicon dioxide.