Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices-Reference-Cited by-同舟云学术

Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices

Published:2023 Issue:33 Volume:11 Page:11195-11203
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ling Chen-Hsiang¹^ORCID,Mo Chi-Lin¹,Chuang Chun-Ho¹,Shyue Jing-Jong¹²^ORCID,Chen Miin-Jang¹³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

2. Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan, Republic of China

3. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

Abstract

This study demonstrates the precise tailoring of material properties of nanoscale thin films and electrical properties of AlN RRAM devices by atomic layer annealing.

Funder

Taiwan Semiconductor Manufacturing Company

National Science and Technology Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00542A

Reference48 articles.

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5. Metal–Oxide RRAM

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