High‐Speed and Low‐Energy Nitride Memristors-Reference-Cited by-同舟云学术

High‐Speed and Low‐Energy Nitride Memristors

Published:2016-05-24 Issue:29 Volume:26 Page:5290-5296
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Choi Byung Joon¹²,Torrezan Antonio C.¹,Strachan John Paul¹,Kotula P. G.³,Lohn A. J.³,Marinella Matthew J.³,Li Zhiyong¹,Williams R. Stanley¹,Yang J. Joshua¹⁴

Affiliation:

1. Hewlett Packard Labs Palo Alto CA 94304 USA

2. Department of Materials Science and Engineering Seoul National University of Science and Technology Seoul 01811 South Korea

3. Sandia National Laboratories Albuquerque NM 87185 USA

4. Department of Electrical and Computer Engineering University of Massachusetts Amherst MA 01003 USA

Funder

Ministry of Education

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201600680

Reference49 articles.

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