Multistate nonpolar resistive switching in nickel embedded polyoxovanadate for high density data storage-Reference-Cited by-同舟云学术

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Multistate nonpolar resistive switching in nickel embedded polyoxovanadate for high density data storage

Published:2024-10 Issue: Volume:1003 Page:175496
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Thathron Nivedya,Biradar Bhimaraya R.,Pandey Sushil Kumar,Mal Sib Sankar,Das Partha Pratim

Funder

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

University Grants Commission

National Institute of Technology Karnataka, Surathkal

Publisher

Elsevier BV

Reference53 articles.

1. Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

2. A review of emerging non-volatile memory (NVM) technologies and applications

3. Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

4. Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices

5. The Effects of Si Doping on the Endurance and Stability Improvement of AlN-Based Resistive Random Access Memory

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