Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4793535
Reference22 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
3. Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors
4. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
5. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
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