Impact of defects on the electrical properties of p–n diodes formed by implanting Mg and H ions into N-polar GaN
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5116886
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1. Recent progress of GaN power devices for automotive applications
2. Planar Nearly Ideal Edge-Termination Technique for GaN Devices
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4. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
5. Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer
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1. Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN;physica status solidi (RRL) – Rapid Research Letters;2024-04-22
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4. Interface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer;AIP Advances;2022-12-01
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