Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer-Reference-Cited by-同舟云学术

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Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer

Published:2017-07 Issue:7 Volume:38 Page:933-936
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Mandal Saptarshi^ORCID,Agarwal Anchal,Ahmadi Elaheh,Bhat K. Mahadeva,Ji Dong^ORCID,Laurent Matthew A.,Keller Stacia,Chowdhury Srabanti

Funder

DARPA-YFA Program

ARPA-E SWITCHES Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7956370/07935531.pdf?arnumber=7935531

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2. Comparative Performance Evaluation for 1.2–10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors;physica status solidi (a);2023-07-04

3. High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion;Crystals;2023-04-21

4. A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers With Low Channel Thickness;IEEE Transactions on Electron Devices;2023-03

5. Cascode Configuration of GaN Static Induction Transistor for MHz Power Switch Applications;Semiconductor Science and Technology;2023-02-07

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