Cascode Configuration of GaN Static Induction Transistor for MHz Power Switch Applications

Abstract

Abstract A cascoded GaN static induction transistor (SIT) that combines a low voltage Si MOSFET at the input and a high voltage GaN SIT at the output has been simulated and evaluated. The Schottky-gate SIT is an ideal choice for the cascode configuration as it provides a parallel Schottky diode, enabling bi-directional conduction. Simulation results show that the device has great potential for MHz frequency switching applications. Additionally, power losses in the Si MOSFET and GaN SIT have been analyzed separately.