Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1728302
Reference10 articles.
1. Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
2. Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
3. Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique
4. Optical properties of InGaN quantum wells
5. Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs
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