Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
2. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
3. Compensation of n‐type GaN
4. Band-gap narrowing and potential fluctuation in Si-doped GaN
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