Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs-Reference-Cited by-同舟云学术

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Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

Published:1998-12 Issue:1-4 Volume:195 Page:397-400
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tran C.A,Karlicek R.F,Schurman M,Osinsky A,Merai V,Li Y,Eliashevich I,Brown M.G,Nering J,Ferguson I,Stall R

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

2. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

3. Solid phase immiscibility in GaInN

4. Calculation of ternary and quaternary III–V phase diagrams

5. Miscibility gaps in quaternary III/V alloys

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3. Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations;AIP Advances;2021-09-01

4. Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface;Semiconductor Science and Technology;2020-11-25

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