Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations-Reference-Cited by-同舟云学术

Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations

Published:2021-09-01 Issue:9 Volume:11 Page:095208
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Miyoshi Makoto¹²^ORCID,Nakabayashi Taiki¹,Yamamoto Kosuke¹,Dalapati Pradip¹^ORCID,Egawa Takashi¹²^ORCID

Affiliation:

1. Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan

2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya 466-8555, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0062346

Reference35 articles.

1. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

2. Design and characterization of GaN∕InGaN solar cells

3. High internal and external quantum efficiency InGaN/GaN solar cells

4. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

5. InGaN Solar Cells: Present State of the Art and Important Challenges

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