Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations
Author:
Affiliation:
1. Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan
2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya 466-8555, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0062346
Reference35 articles.
1. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
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4. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
5. InGaN Solar Cells: Present State of the Art and Important Challenges
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2. High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties;Journal of Vacuum Science & Technology B;2022-12
3. Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects;Sensors and Actuators A: Physical;2022-11
4. The role of p-GaN layer thickness for the evaluation of high-performance and ultrafast GaInN/GaN multiple quantum wells UV photodetectors;Optical Materials;2022-05
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