The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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2. Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction;Digest Journal of Nanomaterials and Biostructures;2023-12-20
3. Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction;2023-06-19
4. Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure;Journal of Luminescence;2023-05
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