III-nitride based ultraviolet laser diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1674-4926/40/12/120402/pdf
Reference10 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate;Nakamura;Appl Phys Lett,1998
2. Ultraviolet GaN single quantum well laser diodes;Nagahama;Jpn J Appl Phys,2001
3. Characteristics of ultraviolet laser diodes composed of quaternary AlxInyGa(1–x–y)N;Nagahama;Jpn J Appl Phys,,2001
4. 365 nm ultraviolet laser diodes composed of quaternary AlInGaN alloy;Masui;Jpn J Appl Phys,2003
5. 350.9 nm UV laser diode grown on low-dislocation-density AlGaN;Iida;Jpn J Appl Phys,2004
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