Improved Performance of InGaN/AlGaN Multiple‐Quantum‐Well Near‐UV Light‐Emitting Diodes with Convex Barriers and Staggered Wells-Reference-Cited by-同舟云学术

Improved Performance of InGaN/AlGaN Multiple‐Quantum‐Well Near‐UV Light‐Emitting Diodes with Convex Barriers and Staggered Wells

Published:2022-08-04 Issue:19 Volume:219 Page:2200316
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Cai Li-E.¹^ORCID,Xu Chao-Zhi¹,Lin Hao-Xiang²,Zheng Jin-Jian³,Cheng Zai-Jun¹,Xiong Fei-Bing¹,Ren Peng-Peng¹,Chen Zhi-Chao¹

Affiliation:

1. School of Opto-electronic and Communication Engineering Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices Xiamen University of Technology Xiamen 361024 China

2. School of Electronic and Information Engineering Beihang University Beiijng 100083 China

3. Silan Academy of Compound Semiconductor Technology Xiamen Silan Advanced Compound Semiconductor Co., Ltd. Xiamen 361026 China

Funder

Natural Science Foundation of Fujian Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200316

Reference41 articles.

1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

2. White light-emitting diodes: History, progress, and future

3. Materials and Mechanics for Stretchable Electronics

4. Solid-State Light Sources Getting Smart

5. Nitride-based semiconductors for blue and green light-emitting devices

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