High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer-Reference-Cited by-同舟云学术

High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

Published:2016-05-17 Issue:11 Volume:24 Page:11387
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Tzou An-Jye,Lin Da-Wei,Yu Chien-Rong,Li Zhen-Yu,Liao Yu-Kuang,Lin Bing-Cheng,Huang Jhih-Kai,Lin Chien-Chung,Kao Tsung Sheng,Kuo Hao-Chung,Chang Chun-Yen

Funder

Ministry of Science and Technology in Taiwan

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference28 articles.

1. Red, green, and blue LEDs for white light illumination

2. Spontaneous polarization and piezoelectric constants of III-V nitrides

3. On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes

4. Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

5. Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes

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