Improved Carrier Confinement With Engineered Electron Blocking Layer in InGaN/GaN-Based Micro-LED at a Lower Current Density
Author:
Affiliation:
1. Indian Institute of Technology Jammu,Department of Electrical Engineering,Jammu,J&K,India,181221
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117951.pdf?arnumber=10117951
Reference17 articles.
1. Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers
2. 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire;hideki;physica status solidi (a),2009
3. High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer
4. Origin of efficiency droop in GaN-based light-emitting diodes
5. Recombination pathways in green InGaN/GaN multiple quantum wells;tao;Nanoscale Research Letters,2017
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Lower current density driven InGaN/GaN micro-LED with improved quantum efficiency;Optik;2024-04
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