Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Incomplete Solubility in Nitride Alloys
2. Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: Application to immiscible III‐V alloys
3. Thermodynamic Analysis of $\bf In_{\ninmbi x}Ga_{1-{\ninmbi x}}N$ Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy
4. Suppression of phase separation in InGaN due to elastic strain
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2. InGaN/GaN Multiple Quantum Wells Materials as Well as Blue and Green LEDs;Springer Series in Materials Science;2020
3. Epitaxial growth of III-nitride electronic devices;III-Nitride Electronic Devices;2019
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5. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition;AIP Advances;2016-06
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