High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953329
Reference24 articles.
1. High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation
2. High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for $X$ -Band Applications
3. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs
4. Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers
5. Direct measurement of electron transport in GaN/sapphire interface layer grown by metalorganic chemical vapor deposition
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