Deep levels in virtually unstrained InGaAs layers deposited on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368404
Reference20 articles.
1. Influence of lattice misfit on heterojunction bipolar transistors with lattice‐mismatched InGaAs bases
2. Electrical and optical properties of selectively doped Al0.25Ga0.75As/InyGa1−yAs (0.25≤y≤0.45) pseudomorphic heterostructures grown by molecular‐beam epitaxy
3. High power InGaAs/GaAs laser array
4. InAsp‐ndiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy
5. Fabry–Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature
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