Electrical and optical properties of selectively doped Al0.25Ga0.75As/InyGa1−yAs (0.25≤y≤0.45) pseudomorphic heterostructures grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111071
Reference13 articles.
1. High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
2. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
3. 60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs
4. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
5. A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer
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1. Deep levels in virtually unstrained InGaAs layers deposited on GaAs;Journal of Applied Physics;1998-09
2. Improved hole transport properties of highly strained In0.35Ga0.65As channel double-modulation-doped structures grown by MBE on GaAs;Journal of Crystal Growth;1997-05
3. Highly strained ln0.35Ga0.65As/GaAs layers grown by molecular beam epitaxy for high hole mobility transistors;Journal of Electronic Materials;1996-06
4. Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular‐beam epitaxy;Journal of Applied Physics;1995-08
5. Highly strained InGaAs layers on GaAs grown by molecular beam epitaxy for high electron mobility transistors;Journal of Crystal Growth;1995-05
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