Growth and photoluminescence studies of a-plane AlN∕AlxGa1−xN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2743956
Reference15 articles.
1. Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys
2. Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells
3. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
4. Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
5. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
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2. Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate;Advanced Functional Materials;2019-09-26
3. InAlN-based LEDs emitting in the near-UV region;Japanese Journal of Applied Physics;2019-05-23
4. Non-Polar a -Plane AlN Growth on Nitrided r -Plane Sapphire by Ga-Al Liquid-Phase Epitaxy;physica status solidi (b);2017-11-17
5. Fabrication of high-crystallinity a -plane AlN films grown on r -plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions;Journal of Crystal Growth;2017-06
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