Non-Polar a -Plane AlN Growth on Nitrided r -Plane Sapphire by Ga-Al Liquid-Phase Epitaxy-Reference-Cited by-同舟云学术

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Non-Polar a -Plane AlN Growth on Nitrided r -Plane Sapphire by Ga-Al Liquid-Phase Epitaxy

Published:2017-11-17 Issue:5 Volume:255 Page:1700478
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Adachi Masayoshi¹^ORCID,Fukuyama Hiroyuki¹^ORCID

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University; Katahira 2-1-1 980-8577 Sendai Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Similarities and differences in sublimation growth of SiC and AlN

2. Growth of AlN single crystalline boules

3. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

4. Characterization of AlN single crystal fabricated by a novel growth technique, “pyrolytic transportation method”

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effective substrate for the growth of multilayer h-BN on sapphire—substrate off-cut, pre-growth, and post-growth conditions in metal-organic vapor phase epitaxy;2D Materials;2023-02-01

2. In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope;Materials Science in Semiconductor Processing;2022-05

3. The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate;Symmetry;2022-03-14

4. Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE;Materials;2021-03-31

5. Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method;Journal of the Ceramic Society of Japan;2019-09-01

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